3KBP02M-E4/51(2013) データシートの表示（PDF） - Vishay Semiconductors
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3KBP02M-E4/51 Datasheet PDF : 4 Pages
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3KBP005M, 3KBP01M, 3KBP02M, 3KBP04M, 3KBP06M, 3KBP08M
www.vishay.com
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
−
~
~
+
Case Style KBPM
+~~−
PRIMARY CHARACTERISTICS
Package
KBPM
IF(AV)
3.0 A
VRRM
50 V, 100 V, 200 V, 400 V, 600 V, 800 V
IFSM
80 A
IR
5 μA
VF at IF = 3.0 A
1.05 V
TJ max.
150 °C
Diode variations
In-Line
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit board
• High surge current capability
e4
• High case dielectric strength
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances, office
equipment, and telecommunication applications.
MECHANICAL DATA
Case: KBPM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E4 - RoHS-compliant, commercial grade
Terminals: Silver plated leads, solderable per
J-STD-002 and JESD22-B102
Polarity: As marked on body
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL 3KBP005M 3KBP01M 3KBP02M 3KBP04M 3KBP06M 3KBP08M UNIT
Maximum repetitive peak reverse voltage
VRRM
50
Maximum RMS voltage
VRMS
35
100
200
400
600
800
V
70
140
280
420
560
V
Maximum DC blocking voltage
VDC
50
Maximum average forward output rectified
current at TA = 55 °C (Fig. 1)
Peak forward surge current 50 Hz single half
sine-wave superimposed on rated load
IF(AV)
IFSM
Rating for fusing (t < 10 ms)
I2t
100
200
400
600
800
V
3.0
A
80
A
32
A2s
Operating junction and storage temperature
range
TJ, TSTG
- 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
SYMBOL
3KBP005M
3KBP01M
3KBP02M
3KBP04M
3KBP06M
3KBP08M
Maximum instantaneous
forward voltage drop per 3.0 A
VF
1.05
diode
Maximum DC reverse
TJ = 25 °C
5.0
current at rated DC
IR
blocking voltage per diode TJ = 125 °C
500
Typical junction
capacitance per diode
4.0 V,
1 MHz
CJ
25
UNIT
V
μA
pF
Revision: 27-Jun-13
1
Document Number: 88888
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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