FCB20N60F_F085 データシートの表示（PDF） - Fairchild Semiconductor
部品番号
コンポーネント説明
メーカー
FCB20N60F_F085 Datasheet PDF : 6 Pages
| |||
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Off Characteristics
Test Conditions
Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage
IDSS
Drain to Source Leakage Current
IGSS
Gate to Source Leakage Current
On Characteristics
ID = 250μA, VGS = 0V
600
VDS=600V, TJ = 25oC
-
VGS = 0V
TJ = 150oC(Note 4)
-
VGS = ±30V
-
-
-
V
-
1
μA
-
1
mA
-
±100 nA
VGS(th)
rDS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
Dynamic Characteristics
VGS = VDS, ID = 250μA
3.0 4.0 5.0
V
ID = 20A,
TJ = 25oC
-
173 198 mΩ
VGS= 10V TJ = 150oC(Note 4) -
471 570 mΩ
Ciss
Coss
Crss
Rg
Qg(ToT)
Qg(th)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge
-
VDS = 25V, VGS = 0V,
f = 1MHz
-
-
f = 1MHz
-
VGS = 0 to 10V
VGS = 0 to 2V
VDD = 300V
-
ID = 20A
-
-
-
2710 3080 pF
1350 1665 pF
86
150 pF
1
-
Ω
72
102
nC
5
8.6
nC
15
-
nC
31
-
nC
Switching Characteristics
ton
td(on)
tr
td(off)
tf
toff
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
-
-
VDD = 300V, ID = 20A,
-
VGS = 10V, RG = 25Ω
-
-
-
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Voltage
Trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD = 20A, VGS = 0V
-
IF = 20A, dISD/dt = 100A/μs,
-
VDD=480V
-
Notes:
4: The maximum value is specified by design at TJ = 150°C. Product is not tested to this condition in production.
-
166
ns
44
-
ns
60
-
ns
208
-
ns
43
-
ns
-
400
ns
-
1.4
V
486 632
ns
10
13
μC
FCB20N60_F085 Rev. C1
2
www.fairchildsemi.com
Share Link: 