APTDF400U120G(2006) データシートの表示（PDF） - Microsemi Corporation

部品番号

コンポーネント説明

メーカー

APTDF400U120G
(Rev.:2006)

Single diode Power Module

Microsemi Corporation 

APTDF400U120G

All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic

Test Conditions

Min Typ Max Unit

VF Diode Forward Voltage

IRM Maximum Reverse Leakage Current

IF = 500A

IF = 1000A

IF = 500A

VR = 1200V

Tj = 150°C

Tj = 25°C

Tj = 125°C

2.5

2.5

V

2.0

2500 µA

5000

CT Junction Capacitance

VR = 200V

600

pF

Dynamic Characteristics

Symbol Characteristic

trr1

trr2

trr3

tfr1

tfr2

IRRM1

IRRM2

Qrr1

Qrr2

Vfr1

Vfr2

Reverse Recovery Time

Forward Recovery Time

Reverse Recovery Current

Reverse Recovery Charge

Forward Recovery Voltage

dIM/dt Rate of Fall of Recovery Current

Test Conditions

Min Typ Max Unit

IF=1A,VR=30V

di/dt = 15A/µs

Tj = 25°C

90

IF = 500A

Tj = 25°C

110

ns

VR = 650V

di/dt=1000A/µs Tj = 100°C

175

Tj = 25°C

220

ns

Tj = 100°C

220

Tj = 25°C

70

A

Tj = 100°C

120

IF = 500A

VR = 650V

Tj = 25°C

10

µC

di/dt=1000A/µs Tj = 100°C

30

Tj = 25°C

26

V

Tj = 100°C

26

Tj = 25°C

1200

A/µs

Tj = 100°C

800

Thermal and package characteristics

Symbol Characteristic

RthJC

VISOL

Junction to Case Thermal Resistance

RMS Isolation Voltage, any terminal to case

t =1 min, I isol<1mA, 50/60Hz

TJ Operating junction temperature range

TSTG Storage Temperature Range

TC Operating Case Temperature

Torque Mounting torque

Wt Package Weight

To heatsink

For terminals

Min Typ Max Unit

0.08 °C/W

2500

V

-40

-40

-40

M5 2.5

M6 3

150

125 °C

100

3.5

4

N.m

250 g

www.microsemi.com

2-3

Share Link: