SPW47N65C3 データシートの表示（PDF） - Infineon Technologies
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SPW47N65C3 Datasheet PDF : 11 Pages
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Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous diode forward current
Diode pulse current2)
Symbol Conditions
IS
I S,pulse
T C=25 °C
SPW47N65C3
Value
Unit
47
A
141
Parameter
Thermal characteristics
Symbol Conditions
Values
Unit
min. typ. max.
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R thJC
R thJA
Soldering temperature,
wavesoldering only allowed at leads
T sold
leaded
1.6 mm (0.063 in.)
from case for 10 s
-
-
0.3 K/W
-
-
62
-
-
260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V (BR)DSS V GS=0 V, I D=250 µA
650
V GS(th) V DS=V GS, I D=2.7 mA
2.1
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
-
V DS=600 V, V GS=0 V,
T j=150 °C
-
I GSS
V GS=20 V, V DS=0 V
-
R DS(on)
V GS=10 V, I D=30 A,
T j=25 °C
-
V GS=10 V, I D=30 A,
T j=150 °C
-
RG
f =1 MHz, open drain
-
-
3
0.5
50
-
0.06
0.17
0.75
-V
3.9
25 µA
-
100 nA
0.07 Ω
-
-Ω
Rev. 1.2
page 2
2008-02-12
Please note the new package dimensions arccording to PCN 2009-134-A
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