STD7N65M2 データシートの表示（PDF） - STMicroelectronics
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コンポーネント説明
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STD7N65M2
STMicroelectronics
STD7N65M2 Datasheet PDF : 17 Pages
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Electrical characteristics
2
Electrical characteristics
STD7N65M2
(TC = 25 °C unless otherwise specified)
Symbol
Parameter
Table 5. On /off states
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
VGS = 0, ID = 1 mA
Zero gate voltage
IDSS
drain current
IGSS
Gate-body leakage
current
VGS = 0, VDS = 650 V
VGS = 0, VDS = 650 V,
TC=125 °C
VDS = 0, VGS = ± 25 V
VGS(th)
RDS(on)
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source
on-resistance
VGS = 10 V, ID = 2.5 A
Min. Typ. Max. Unit
650
V
1 µA
100 µA
±10 µA
2
3
4
V
0.98 1.15 Ω
Symbol
Parameter
Table 6. Dynamic
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
-
270
- pF
-
14.5
- pF
-
0.8
- pF
Coss
(1)
eq.
Equivalent output
capacitance
VDS = 0 to 520 V, VGS = 0
-
108
- pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
7
-
Ω
Qg
Total gate charge
VDD = 520 V, ID = 5 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 15)
-
9
- nC
-
2.3
- nC
-
4.3
- nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 7. Switching times
Test conditions
VDD = 325 V, ID = 2.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 14 and 19)
Min. Typ. Max. Unit
-
8
- ns
-
20
- ns
-
30
- ns
-
20
- ns
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DocID026787 Rev 2
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