SS10P2CL(2018) データシートの表示（PDF） - Vishay Semiconductors

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SS10P2CL
(Rev.:2018)

High Current Density Surface Mount Dual Common Cathode Schottky Rectifiers

Vishay Semiconductors 

www.vishay.com

SS10P2CL, SS10P3CL

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

Instantaneous forward voltage

per diode

Reverse current per diode

IF = 2.5 A

IF = 5.0 A

IF = 2.5 A

IF = 5.0 A

Rated VR

TA = 25 °C

TA = 125 °C

TA = 25 °C

TA = 125 °C

VF (1)

IR (2)

Typical junction capacitance per diode

4.0 V, 1 MHz

CJ

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width  40 ms

TYP.

0.391

0.440

0.272

0.338

95

37

560

MAX.

-

0.52

-

0.42

850

55

-

UNIT

V

μA

mA

pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified)

PARAMETER

SYMBOL

SS10P2CL

RJA (1)

60

Typical thermal resistance per diode

RJL

3

Note

(1) Units mounted on recommended PCB 1 oz. pad layout

SS10P3CL

UNIT

°C/W

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

SS10P3CL-M3/86A

0.10

SS10P3CL-M3/87A

SS10P3CLHM3_A/H (1)

SS10P3CLHM3_A/I (1)

0.10

0.10

0.10

Note

(1) AEC-Q101 qualified

PACKAGE CODE

86A

87A

H

I

BASE QUANTITY

1500

6500

1500

6500

DELIVERY MODE

7" diameter plastic tape and reel

13" diameter plastic tape and reel

7" diameter plastic tape and reel

13" diameter plastic tape and reel

Revision: 22-Mar-18

2

Document Number: 89036

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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