IPD075N03LG(2009) データシートの表示（PDF） - Infineon Technologies

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IPD075N03LG
(Rev.:2009)

OptiMOS®3 Power-Transistor

Infineon Technologies 

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Power dissipation

P tot

T C=25 °C

Operating and storage temperature T j, T stg

IEC climatic category; DIN IEC 68-1

IPD075N03L G IPF075N03L G

IPS075N03L G IPU075N03L G

Value

Unit

47

W

-55 ... 175

°C

55/175/56

Parameter

Symbol Conditions

min.

Values

typ.

Unit

max.

Thermal characteristics

Thermal resistance, junction - case R thJC

-

SMD version, device on PCB

R thJA minimal footprint

-

6 cm² cooling area4)

-

-

3.2 K/W

-

75

-

50

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=1 mA

30

-

-V

Gate threshold voltage

V GS(th) V DS=V GS, I D=250 µA

1

-

2.2

Zero gate voltage drain current

I DSS

V DS=30 V, V GS=0 V,

T j=25 °C

-

V DS=30 V, V GS=0 V,

T j=125 °C

-

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

Drain-source on-state resistance5) R DS(on) V GS=4.5 V, I D=30 A

-

V GS=10 V, I D=30 A

-

Gate resistance

RG

-

0.1

1 µA

10

100

10

100 nA

9.1

11.4 mΩ

6.3

7.5

1.3

-Ω

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=30 A

30

61

-S

2) See figure 3 for more detailed information

3) See figure 13 for more detailed information

4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

5) Measured from drain tab to source pin

Rev. 1.1

page 2

2009-01-14

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