9 Drain-source on-state resistance
R DS(on)=f(T j); I D=30 A; V GS=10 V
IPD075N03L G IPF075N03L G
IPS075N03L G IPU075N03L G
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS; I D=250 µA
16
2.5
14
2
12
10
1.5
8
98 %
typ
6
1
4
0.5
2
0
-60
-20
20
60 100 140 180
T j [°C]
0
-60 -20
20
60 100 140 180
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
103
103
Ciss
Coss
102
Crss
101
102
175 °C
25 °C
175 °C, 98%
z
25 °C, 98%
101
100
0
Rev. 1.1
10
20
V DS [V]
100
30
0
page 6
0.5
1
1.5
V SD [V]
2
2009-01-14