FSL4110LR データシートの表示（PDF） - Fairchild Semiconductor
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FSL4110LR Datasheet PDF : 15 Pages
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Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device
reliability. The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Min.
Max.
Unit
VSTR
VDS
VCC
VFB
VIN
IDM
IDS
EAS
PD
TJ
TSTG
VSTR Pin Voltage
Drain Pin Voltage
VCC Pin Voltage
Feedback Pin Voltage(6)
VIN Pin Voltage(6)
Drain Current Pulsed
Continuous Switching Drain Current (7)
Single Pulsed Avalanche Energy(8)
Total Power Dissipation (TC=25C)(9)
Maximum Junction Temperature
Operating Junction Temperature(10)
Storage Temperature
TC=25C
TC=100C
-0.3
-0.3
-40
-55
700
V
1000
V
27
V
12.0
V
12.0
V
4
A
1
A
0.6
A
51
mJ
1.5
W
150
C
+125
C
+150
C
Notes:
6. VFB and VIN are clamped by internal clamping diode (11 V, ICLAMP_MAX < 100 µA).
7. Repetitive peak switching current when the inductive load is assumed: Limited by maximum duty (DMAX=0.73)
and junction temperature (see Figure 4).
8. IAS = 3.2 A, L = 10 mH, starting TJ=25C.
9. Infinite cooling condition (refer to the SEMI G30-88).
10. Although this parameter guarantees IC operation, it does not guarantee all electrical characteristics.
IDS
DMAX
fS
Figure 4. Repetitive Peak Switching Current
Thermal Impedance
Symbol
Parameter
Value
θJA
Junction-to-Ambient Thermal Impedance(11)
85
Note:
11. JEDEC recommended environment, JESD51-2, and test board, JESD51-3, with minimum land pattern.
Unit
°C/W
ESD Capability
Symbol
Parameter
ESD
Human Body Model, ANSI/ESDA/JEDEC JS-001-2012
Charged Device Model, JESD22-C101
Value
5.0
2.0
Unit
KV
© 2014 Fairchild Semiconductor Corporation
FSL4110LR • Rev. 1.3
4
www.fairchildsemi.com
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