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IRF710S, SiHF710S
Vishay Siliconix
VDS
Vary tp to obtain
required IAS
Rg
10 V
tp
L
D.U.T
IAS
0.01 Ω
+
- V DD
Fig. 12a - Unclamped Inductive Test Circuit
VDS
VDS
tp
VDD
IAS
Fig. 12b - Unclamped Inductive Waveforms
300
ID
Top 0.89 A
250
1.3 A
Bottom 2.0 A
200
150
100
50
0 VDD = 50 V
25
50
75
100
125
150
91042_12c
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
10 V
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
S20-0682-Rev. D, 07-Sep-2020
5
Document Number: 91042
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