IRLR/U120NPbF
800
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
600
Ciss
400
Coss
200
Crss
0
A
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
15
ID = 6.0A
12
9
VDS = 80V
VDS = 50V
VDS = 20V
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
0
5
10
15
20
25
Q G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
10
TJ = 175°C
TJ = 25°C
1
0.1
0.4
VGS = 0V A
0.6
0.8
1.0
1.2
1.4
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10µs
10
100µs
1ms
1
10ms
TC = 25°C
TJ = 175°C
Single Pulse
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
A
1000
Fig 8. Maximum Safe Operating Area
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