AUIRLR120N データシートの表示（PDF） - International Rectifier

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AUIRLR120N

HEXFET® Power MOSFET

International Rectifier 

AUIRLR120N

Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

–––

–––

–––

–––

0.12

–––

–––

–––

–––

0.185

0.225

0.265

V/°C Reference to 25°C, ID = 1mA

f VGS = 10V, ID = 6.0A

f Ω VGS = 5.0V, ID = 6.0A

f VGS = 4.0V, ID = 5.0A

VGS(th)

Gate Threshold Voltage

1.0 ––– 2.0 V VDS = VGS, ID = 250µA

gfs

Forward Transconductance

3.1 ––– ––– S VDS = 25V, ID = 6.0A

IDSS

Drain-to-Source Leakage Current

––– ––– 25 µA VDS = 100V, VGS = 0V

––– ––– 250

VDS = 80V, VGS = 0V, TJ = 150°C

IGSS

Gate-to-Source Forward Leakage

––– ––– 100 nA VGS = 16V

Gate-to-Source Reverse Leakage

––– ––– -100

VGS = -16V

Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

Qg

Total Gate Charge

––– ––– 20

ID = 6.0A

Qgs

Qgd

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

––– ––– 4.6

––– ––– 10

f nC VDS = 80V

VGS = 5.0V, See Fig. 6 & 13

td(on)

Turn-On Delay Time

––– 4.0 –––

VDD = 50V

tr

Rise Time

––– 35 –––

ID = 6.0A

td(off)

tf

Turn-Off Delay Time

Fall Time

–––

–––

23

22

–––

–––

f ns RG = 11Ω, VGS = 5.0V,

RD = 8.2Ω, See Fig. 10

LD

Internal Drain Inductance

––– 4.5 –––

Between lead,

D

LS

Internal Source Inductance

nH 6mm (0.25in.)

––– 7.5 –––

from package

G

and center of die contact

S

Ciss

Input Capacitance

––– 440 –––

VGS = 0V

Coss

Output Capacitance

––– 97 –––

VDS = 25V

Crss

Reverse Transfer Capacitance

––– 50 ––– pF ƒ = 1.0MHz, See Fig. 5

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

Ù (Body Diode)

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

––– ––– 10

MOSFET symbol

D

A showing the

––– ––– 35

integral reverse

G

––– ––– 1.3

f p-n junction diode.

S

V TJ = 25°C, IS = 6.0A, VGS = 0V

–––

–––

110

410

160

620

f ns TJ = 25°C, IF = 6.0A

nC di/dt = 100A/µs

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

‚ VDD = 25V, starting TJ = 25°C, L = 4.7mH

RG = 25Ω, IAS = 6.0A. (See Figure 12)

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

… Rθ is measured at TJ approximately 90°C.

ƒ ISD ≤ 6.0A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 175°C

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .

For recommended footprint and soldering techniques refer to application note #AN-994

2

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