LH28F016SU データシートの表示（PDF） - Sharp Electronics
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LH28F016SU Datasheet PDF : 37 Pages
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16M (1M × 16, 2M × 8) Flash Memory
LH28F016SU
DC Characteristics (Continued)
VCC = 3.3 V ± 0.3 V, TA = 0°C to +70°C
3/5 » = Pin Set High for 3.3 V Operations
SYMBOL
PARAMETER
TYPE
MIN.
MAX. UNITS
TEST CONDITIONS
IPPR VPP Read Current
IPPW VPP Write Current
40
200
µA VPP > VCC
60
mA
VPP = VPPH, Word/Byte
Write in Progress
IPPE VPP Erase Current
20
40
mA
VPP = VPPH,
Block Erase in Progress
IPPES
VPP Erase Suspend
Current
200
µA
VPP = VPPH,
Block Erase Suspended
VIL Input Low Voltage
VIH Input High Voltage
VOL Output Low Voltage
VOH1
VOH2
VPPL
Output High Voltage
VPP during Normal
Operations
-0.3
0.8
V
2.0
VCC + 0.3 V
0.4
V
VCC = VCC MIN. and
IOL = 4 mA
2.4
V
IOH = 2.0 mA
VCC = VCC MIN.
VCC - 0.2
V
IOH = 100 µA
VCC = VCC MIN.
0.0
5.5
V
VPPH
VPP during Write/Erase
Operations
5.0
4.5
5.5
V
VLKO
VCC Erase/Write
Lock Voltage
2.0
V
NOTE
1
1
1
1
NOTES:
1. All currents are in RMS unless otherwise noted. Typical values at VCC = 3.3 V, VPP = 5.0 V, T = 25°C. These currents are valid for all
product versions (package and speeds).
2. ICCES is specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum of
ICCES and ICCR.
3. Automatic Power Saving (APS) reduces ICCR to less than 1 mA in Static operation.
4. CMOS inputs are either VCC ± 0.2 V or GND ± 0.2 V. TTL Inputs are either VIL or VIH.
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