MX25L6406E(2010) データシートの表示（PDF） - Macronix International

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MX25L6406E
(Rev.:2010)

64M-BIT [x 1 / x 2] CMOS SERIAL FLASH

Macronix International 

MX25L6406E

ERASE AND PROGRAMMING PERFORMANCE

PARAMETER

Write Status Register Time

Sector Erase Time

Block Erase Time

Chip Erase Time

Byte Program Time (via page program command)

Page Program Time

Erase/Program Cycle

Min.

TYP. (1)

5

60

0.7

50

9

1.4

100,000

Max. (2)

40

300

2

80

300

5

UNIT

ms

ms

s

s

us

ms

cycles

Note:

1. Typical program and erase time assumes the following conditions: 25°C, 3.3V, and checker board pattern.

2. Under worst conditions of 85°C and 2.7V.

3. System-level overhead is the time required to execute the first-bus-cycle sequence for the programming com-

mand.

4. Erase/Program cycles comply JEDEC: JESD-47 & JESD22-A117 standard.

DATA RETENTION

PARAMETER

Data retention

Condition

55˚C

Min.

20

Max.

UNIT

years

LATCH-UP CHARACTERISTICS

MIN.

Input Voltage with respect to GND on all power pins, SI, CS#

-1.0V

Input Voltage with respect to GND on SO

-1.0V

Current

-100mA

Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.

MAX.

2 VCCmax

VCC + 1.0V

+100mA

P/N: PM1577

REV. 1.1, NOV. 17, 2010

43

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