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SI4936ADY データシートの表示(PDF) - Vishay Semiconductors

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SI4936ADY
VISHAYSEMICONDUCTOR
Vishay Semiconductors VISHAYSEMICONDUCTOR
SI4936ADY Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.08
1000
Si4936ADY
Vishay Siliconix
0.06
0.04
0.02
VGS = 4.5 V
VGS = 10 V
0.00
0
6
12
18
24
30
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
VDS = 15 V
ID = 5.9 A
8
800
Ciss
600
400
200
Crss
Coss
0
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
VGS = 10 V
ID = 5.9 A
1.4
6
1.2
4
1.0
2
0.8
0
0
3
6
9
12
15
Qg - Total Gate Charge (nC)
Gate Charge
30
TJ = 150 °C
10
TJ = 25 °C
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.08
0.06
ID = 5.9 A
0.04
0.02
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 71132
S09-0869-Rev. D, 18-May-09
0.00
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
www.vishay.com
3

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