AUIRFN8459TR データシートの表示（PDF） - International Rectifier
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AUIRFN8459TR Datasheet PDF : 10 Pages
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AUIRFN8459
Thermal Resistance
Symbol
Parameter
RJC (Bottom)
RJC (Top)
RJA
RJA (<10s)
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ.
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
40 –––
––– 0.037
––– 4.8
2.2 3.0
66 –––
RG
Internal Gate Resistance
––– 1.9
IDSS
Drain-to-Source Leakage Current
––– –––
––– –––
Max.
–––
–––
5.9
3.9
–––
–––
1.0
150
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100
––– ––– -100
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
Qg
Total Gate Charge
––– 40 60
Qgs
Gate-to-Source Charge
––– 13 –––
Qgd
Gate-to-Drain ("Miller") Charge
––– 14 –––
Qsync
Total Gate Charge Sync. (Qg - Qgd)
––– 26 –––
td(on)
Turn-On Delay Time
––– 10 –––
tr
Rise Time
––– 55 –––
td(off)
Turn-Off Delay Time
––– 25 –––
tf
Fall Time
––– 42 –––
Ciss
Input Capacitance
––– 2250 –––
Coss
Output Capacitance
––– 340 –––
Crss
Reverse Transfer Capacitance
––– 215 –––
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 400 –––
Coss eff. (TR) Effective Output Capacitance (Time Related)
Diode Characteristics
––– 490 –––
Symbol
IS
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max.
––– ––– 70
ISM
Pulsed Source Current
(Body Diode)
––– ––– 320
VSD
dv/dt
trr
Qrr
IRRM
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
––– ––– 1.3
––– 7.0 –––
––– 22 –––
––– 23 –––
––– 17 –––
––– 17 –––
––– 1.0 –––
Typ.
–––
–––
–––
–––
Max.
3.0
45
105
80
Units
°C/W
Units
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1.0mA
m VGS = 10V, ID = 40A
V VDS = VGS, ID = 50µA
S VDS = 10V, ID = 40A
µA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
nA
VGS = 20V
VGS = -20V
Units
Conditions
ID = 40A
nC
VDS = 20V
VGS = 10V
ID = 40A, VDS =0V, VGS = 10V
VDD = 26V
ns
ID = 40A
RG = 2.7
VGS = 10V
VGS = 0V
VDS = 25V
pF ƒ = 1.0 MHz
VGS = 0V, VDS = 0V to 32V
VGS = 0V, VDS = 0V to 32V
Units
Conditions
A
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V
V/ns
ns
nC
A
TJ = 25°C, IS = 40A, VGS = 0V
TJ = 175°C, IS= 40A, VDS = 40V
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 34V,
IF = 40A
di/dt = 100A/µs
TJ = 125°C
TJ = 25°C
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July 29, 2014
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