SIZ910DT-T1-GE3 データシートの表示（PDF） - Vishay Semiconductors
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SIZ910DT-T1-GE3 Datasheet PDF : 14 Pages
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New Product
SiZ910DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
20
VGS = 10 V thru 4 V
80
16
60
40
VGS = 3 V
20
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
Output Characteristics
0.008
12
8
4
0
0.0
2000
TC = 25 °C
TC = 125 °C
TC = - 55 °C
0.5
1.0
1.5
2.0
2.5
3.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.007
0.006
VGS = 4.5 V
1600
Ciss
1200
0.005
0.004
VGS = 10 V
0.003
0
20
40
60
80
100
ID - Drain Current (A)
On-Resistance vs. Drain Current
10
ID = 20 A
8
VDS = 7.5 V
6
VDS = 15 V
VDS = 24 V
4
2
0
0
6
12
18
24
30
Qg - Total Gate Charge (nC)
Gate Charge
800
400
Crss
Coss
0
0
5
10
15
20
25
30
VDS - Drain-to-Source Voltage (V)
Capacitance
1.8
ID = 20 A
1.6
1.4
VGS = 10, 4.5 V
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
Document Number: 63539
4
S11-2380-Rev. C, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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