SIZ910DT-T1-GE3 データシートの表示（PDF） - Vishay Semiconductors

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SIZ910DT-T1-GE3

Dual N-Channel 30 V (D-S) MOSFETs

Vishay Semiconductors 

New Product

SiZ910DT

Vishay Siliconix

CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

100

0.012

10

TJ = 150 °C

0.010

0.008

ID = 20 A

0.006

TJ = 25 °C

1

0.004

TJ = 125 °C

0.1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD - Source-to-Drain Voltage (V)

Source-Drain Diode Forward Voltage

2.2

0.002

TJ = 25 °C

0.000

0

2

4

6

8

10

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Gate-to-Source Voltage

100

2.0

80

1.8

1.6

60

1.4

40

ID = 250 μA

1.2

20

1.0

0.8

- 50 - 25

0 25 50 75 100 125 150

TJ - Temperature (°C)

Threshold Voltage

1000

100

Limited by RDS(on)*

0

0.001 0.01

0.1

1

10

Time (s)

100 1000

Single Pulse Power

100 μs

10

1 ms

10 ms

1

0.1 TA = 25 °C

Single Pulse

100 ms

1s

10 s

DC

BVDSS Limited

0.01

0.1

1

10

100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area, Junction-to-Ambient

Document Number: 63539

www.vishay.com

S11-2380-Rev. C, 28-Nov-11

9

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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