SPN02N60C3(2004) データシートの表示（PDF） - Infineon Technologies

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SPN02N60C3
(Rev.:2004)

Cool MOS™ Power Transistor

Infineon Technologies 

Rev. 2.1

SPN02N60C3

Electrical Characteristics , at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min. typ. max.

Transconductance

gfs

VDS≥2*ID*RDS(on)max,

- 1.75 - S

ID=0.3A

Input capacitance

Ciss

Output capacitance

Coss

Reverse transfer capacitance Crss

Effective output capacitance,2) Co(er)

energy related

Effective output capacitance,3) Co(tr)

time related

VGS=0V, VDS=25V,

f=1MHz

VGS=0V,

VDS=0V to 480V

- 200 - pF

-

90

-

-

4

-

-

8.1

- pF

- 15.7 -

Turn-on delay time

Rise time

Turn-off delay time

Fall time

td(on)

VDD=350V, VGS=0/10V,

-

tr

ID=0.4A, RG=25Ω

-

td(off)

-

tf

-

6

- ns

3

-

68 70

12 30

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Qgs

Qgd

VDD=420V, ID=0.4A

Gate charge total

Qg

VDD=420V, ID=0.4A,

VGS=0 to 10V

Gate plateau voltage

V(plateau) VDD=420V, ID=0.4A

-

1.6

- nC

-

3.8

-

-

9.5 12.5

-

5.5

-V

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

2Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.

3Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

Page 3

2004-03-01

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