STGW60H60DLFB データシートの表示（PDF） - STMicroelectronics

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STGW60H60DLFB

Trench gate field-stop IGBT, HB series 600 V, 60 A high speed

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STGW60H60DLFB, STGWT60H60DLFB

TJ = 25 °C unless otherwise specified.

Symbol

Table 4. Static characteristics

Parameter

Test conditions

Collector-emitter

V(BR)CES breakdown voltage

(VGE = 0)

IC = 2 mA

VGE = 15 V, IC = 60 A

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 60 A

TJ = 125 °C

VGE = 15 V, IC = 60 A

TJ = 175 °C

IF = 60 A

VF Forward on-voltage

IF = 60 A TJ = 125 °C

IF = 60 A TJ = 175 °C

VGE(th) Gate threshold voltage

VCE = VGE, IC = 1 mA

ICES

Collector cut-off current

(VGE = 0)

VCE = 600 V

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ± 20 V

Min. Typ. Max. Unit

600

V

1.6 2

1.75

V

1.85

1.8 2.1

1.55

V

1.5

5

6

7

V

25 µA

250 nA

Table 5. Dynamic characteristics

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Cies

Coes

Cres

Input capacitance

Output capacitance

Reverse transfer

capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

- 7792 - pF

- 262 - pF

- 158 - pF

Qg Total gate charge

Qge Gate-emitter charge

Qgc Gate-collector charge

VCC = 480 V, IC = 60 A,

VGE = 15 V, see Figure 27

- 306 - nC

- 126 - nC

-

58 - nC

4/17

DocID024403 Rev 3

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