STGW60H60DLFB データシートの表示（PDF） - STMicroelectronics

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STGW60H60DLFB

Trench gate field-stop IGBT, HB series 600 V, 60 A high speed

STMicroelectronics 

STGW60H60DLFB, STGWT60H60DLFB

Electrical characteristics

Table 6. IGBT switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

td(off)

tf

Eoff(1)

Turn-off delay time

Current fall time

Turn-off switching losses

VCE = 400 V, IC = 60 A,

RG = 5 Ω, VGE = 15 V, see

Figure 25

160

ns

-

18

- ns

- 626 - µJ

td(off) Turn-off delay time

VCE = 400 V, IC = 60 A,

184

ns

tf

Current fall time

RG = 5 Ω, VGE = 15 V,

- 117 - ns

Eoff(1) Turn-off switching losses

TJ = 175 °C, see Figure 25

- 1017 -

µJ

1. Turn-off losses include also the tail of the collector current.

Table 7. IGBT switching characteristics (capacitive load)

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

VCC = 320 V, RG = 10 Ω,

IC = 60 A, L = 100 µH,

- 450 -

Csnub = 20 nF, see Figure 26

Eoff(1) Turn-off switching losses

VCC = 320 V, RG = 10 Ω,

µJ

IC = 60 A, L = 100 µH,

Csnub = 20 nF, TJ = 175 °C,

-

785

-

see Figure 26

1. Turn-off losses include also the tail of the collector current.

DocID024403 Rev 3

5/17

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