STGW60H60DLFB データシートの表示（PDF） - STMicroelectronics

部品番号

コンポーネント説明

メーカー

STGW60H60DLFB

Trench gate field-stop IGBT, HB series 600 V, 60 A high speed

STMicroelectronics 

STGW60H60DLFB, STGWT60H60DLFB

Electrical characteristics

Figure 8. Collector current vs. switching

frequency

IC

(A)

120

GIPD021020131506FSR

TC= 80°C

100

80 TC= 100°C

60

40

Rectangular current shape

20 (duty cycle= 0.5, VCC= 400V, Rg=4.7Ω,

VGE = 0/15 V, TJ = 175 °C)

0

1

10

f(kHz)

Figure 9. Forward bias safe operating area

IC

GIPD021020131512FSR

(A)

100

10

Single pulse

1

Tc= 25°C, TJ<= 175°C

VCG=E2=5°C1,5V

0.1

1

10

100

10 μs

100 μs

1 ms

VCE(V)

Figure 10. Transfer characteristics

IC

(A)

VCE=10V

200

GIPD021020131522FSR

150

TJ=175°C

100

-40°C

Figure 11. Diode VF vs. forward current

VF

GIPD021020131534FSR

(V)

TJ= -40°C

2.4

TJ= 25°C

2

1.6

50

25°C

0

7

9

11

13

VGE(V)

1.2

0.8

20

TJ=J 175°C

40 60 80

100 120 IF(A)

Figure 12. Normalized VGE(th) vs junction

temperature

VGE(th)

(norm)

1.1

GIPD021020131540FSR

IC= 1mA

VCE= VGE

1.0

Figure 13. Normalized V(BR)CES vs. junction

temperature

V(BR)CES

(norm)

GIPD021020131546FSR

1.1

IC= 2mA

0.9

1.0

0.8

0.7

0.6

-50

0

50 100 150 TJ(°C)

0.9

-50 0

50 100 150 TJ(°C)

DocID024403 Rev 3

7/17

Share Link: