STGW60H60DLFB データシートの表示（PDF） - STMicroelectronics

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STGW60H60DLFB

Trench gate field-stop IGBT, HB series 600 V, 60 A high speed

STMicroelectronics 

Electrical characteristics

STGW60H60DLFB, STGWT60H60DLFB

Figure 14. Capacitance variation

Figure 15. Gate charge vs. gate-emitter voltage

C

(pF)

10000

1000

GIPD021020131619FSR

Cies

VGE

(V)

16

14

12

10

IC= 60A

IGE= 1mA

VCC= 520V

GIPD021020131623FSR

8

100

Coes

6

Cres

4

10

0.1

1

10

VCE(V)

2

0

0

100

200

300 Qg(nC)

Figure 16. Switching-off loss vs collector

current

Figure 17. Switching-off loss vs gate resistance

E

(μJ)

3000

GIPD021020131627FSR

VCC = 400V, VGE = 15V,

RG = 10Ω, TJ = 175°C

2500

E

(μJ)

2000

GIPD021020131631FSR

VCC = 400 V, VGE = 15 V,

IC = 60 A, TJ = 175 °C

2000

1500

EOFF

1500

EOFF

1000

500

0

0 20 40 60 80 100 120 IC(A)

1000

500

2

6

10 14

18 22 RG(Ω)

Figure 18. Switching-off loss vs temperature

E

(μJ)

2100

GIPD021020131634FSR

VCC= 400V, VGE= 15V,

RG= 10Ω, IC= 60A

1100

Figure 19. Switching-off loss vs collector-

emitter voltage

E

(μJ)

1700

GIPD041020131010FSR

TJ= 175°C, VGE= 15V,

RG= 10Ω, IC= 60A

1400

1000

EOFF

1100

EOFF

900

800

800

25 50 75 100 125 150 TJ(°C)

500

100 200 300 400 500 VCE(V)

8/17

DocID024403 Rev 3

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