STK551U392A-E データシートの表示（PDF） - ON Semiconductor
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STK551U392A-E Datasheet PDF : 15 Pages
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STK551U392A-E
Intelligent Power Module (IPM)
600 V, 15 A
Overview
This “Inverter Power IPM” is highly integrated device containing all High
Voltage (HV) control from HV-DC to 3-phase outputs in a single SIP
module (Single-In line Package). Output stage uses IGBT / FRD
technology and implements Under Voltage Protection (UVP) and Over
Current Protection (OCP) with a Fault Detection output flag. Internal
Boost diodes are provided for high side gate boost drive.
www.onsemi.com
Function
Single control power supply due to Internal bootstrap circuit for high side
pre-driver circuit
All control input and status output are at low voltage levels directly
compatible with microcontrollers
Built-in dead time for shoot-thru protection
Externally accessible embedded thermistor for substrate temperature
measurement
The level of the over-current protection current is adjustable with the
external resistor, “RSD”
Certification
UL1557 (File Number : E339285)
Specifications
Absolute Maximum Ratings at Tc = 25C
Parameter
Supply voltage
Collector-emitter voltage
Output current
Symbol
VCC
VCE
Io
Conditions
V+ to V-, surge < 500 V
V+ to U,V,W or U,V,W to V-
V+, V-, U,V,W terminal current
V+, V-, U,V,W terminal current at Tc = 100C
Ratings
*1
450
600
±15
±8
Output peak current
Iop
V+, V-, U,V,W terminal current for a Pulse width of 1ms.
±30
Pre-driver voltage
Input signal voltage
FAULT terminal voltage
Maximum power dissipation
VD1,2,3,4
VIN
VFAULT
Pd
VB1 to U, VB2 to V, VB3 to W, VDD to VSS
HIN1, 2, 3, LIN1, 2, 3
FAULT terminal
IGBT per channel
*2
20
0.3 to VDD
0.3 to VDD
35
Junction temperature
Tj
Storage temperature
Tstg
Operating case temperature Tc
Tightening torque
IGBT,FRD
IPM case temperature
Case mounting screws
150
40 to +125
40 to +100
*3
1.0
Withstand voltage
Vis
50 Hz sine wave AC 1 minute
*4
2000
Reference voltage is “VSS” terminal voltage unless otherwise specified.
*1: Surge voltage developed by the switching operation due to the wiring inductance between + and U-(V-, W-) terminal.
*2: Terminal voltage: VD1 = VB1 to U, VD2 = VB2 to V, VD3 = VB3 to W, VD4 = VDD to VSS
*3: Flatness of the heat-sink should be 0.15 mm and below.
*4: Test conditions : AC 2500 V, 1 second.
Unit
V
V
A
A
A
V
V
V
W
C
C
C
Nm
VRMS
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 15 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
1
December 2016 - Rev. 2
Publication Order Number :
STK551U392A-E/D
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