STK5F4U3E2D-E データシートの表示（PDF） - ON Semiconductor
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STK5F4U3E2D-E Datasheet PDF : 14 Pages
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Ordering number : EN*A2230
STK5F4U3E2D-E
Advance Information
Thick-Film Hybrid IC
Inverter Power H-IC
for 3-phase Motor Drive
http://onsemi.com
Overview
This “Inverter Power H-IC” is highly integrated device containing all High Voltage (HV) control from HV-DC to
3-phase outputs in a single DIP module (Dual-In line Package). Output stage uses IGBT/FRD technology and
implements Under Voltage Protection (UVP) and Over Current Protection (OCP) with a Fault Detection output flag.
Internal Boost diodes are provided for high side gate boost drive.
Function
Single control power supply due to Internal bootstrap circuit for high side pre-driver circuit
All control inputs and status outputs are at low voltage levels directly compatible with microcontrollers.
A single power supply drive is enabled through the use of bootstrap circuits for upper power supplies
Built-in dead-time for shoot-thru protection
Having open emitter output for low side IGBTs; individual shunt resistor per phase for OCP
Externally accessible embedded thermistor for substrate temperature measurement
Shutdown function ‘ITRIP’ to disable all operations of the 6 phase output stage by external input
Certification
UL1557 (File number: E339285).
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Remarks
Ratings
Unit
Supply voltage
Collector-emitter voltage
Output current
Output peak current
VCC
VCE
Io
Iop
P to NU,NV,NW, surge < 500V *1
P to U,V,W, U to NU, V toNV, or W to NW
P , N , U,V,W terminal current.
P , N , U,V,W terminal current. Tc=100C
P , N, U,V,W terminal current , PW=1ms.
450
V
600
V
±50
A
±25
±100
A
Pre-driver supply voltage
Input signal voltage
FAULT terminal voltage
Maximum loss
VD1,2,3,4
VIN
VFAULT
Pd
VB1-VS1,VB2-VS2,VB3-VS3,VDD-VSS *2
HIN1, 2, 3, LIN1, 2, 3, terminal.
FAULT terminal.
IGBT per channel
20
V
0.3 to VDD
V
0.3 to VDD
V
62.5
W
Junction temperature
Storage temperature
Operating temperature
Tightening torque
Tj
IGBT, FRD
Tstg
Tc
HIC case
MT
A screw part at use M4 type screw *3
150
C
40 to +125
C
20 to +100
C
1.17
Nm
Withstand Voltage
Vis
50Hz sine wave AC 1 minute *4
2000
Reference voltage is “VSS” terminal voltage unless otherwise specified.
*1: Surge voltage developed by the switching operation due to the wiring inductance between the P and N terminals.
*2: Terminal voltage: VD1=VB1-VS1, VD2=VB2-VS2, VD3=VB3-VS3, VD4=VDD-VSS.
*3: Flatness of the heat-sink should be 0.25mm and below.
*4. Test conditions: AC 2500V, 1 second.
VRMS
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
ORDERING INFORMATION
See detailed ordering and shipping information on page 14 of this data sheet.
Semiconductor Components Industries, LLC, 2013
October, 2013
O0913HK No.A2230-1/14
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