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STK551U362AGEVB データシートの表示(PDF) - ON Semiconductor

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STK551U362AGEVB
ON-Semiconductor
ON Semiconductor ON-Semiconductor
STK551U362AGEVB Datasheet PDF : 16 Pages
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STK551U362A-E
Electrical Characteristics at Tc 25C, VD1, VD2, VD3, VD4 = 15V
Parameter
Symbol
Conditions
Test
circuit
min
Power output section
Collector-emitter cut-off current
Bootstrap diode reverse current
ICE
IR(BD)
VCE = 600V
VR(BD)
-
Fig.1
-
Collector to emitter
saturation voltage
Io = 10A
Upper side
-
Tj = 25C
Lower side *1
-
VCE(SAT)
Io = 5A
Upper side
Fig.2
-
Tj = 100C
Lower side *1
-
Diode forward voltage
Io = 10A
Upper side
-
Tj = 25C
Lower side *1
-
VF
Fig.3
Io = 5A
Upper side
-
Tj = 100C
Lower side *1
-
Junction to case
θj-c(T)
IGBT
-
thermal resistance
θj-c(D)
FRD
-
Control (Pre-driver) section
Pre-driver power dissipation
ID
VD1, 2, 3 = 15V
VD4 = 15V
-
Fig.4
-
High level Input voltage
Vin H
2.5
Low level Input voltage
Vin L
HIN1, HIN2, HIN3,
-
LIN1, LIN2, LIN3 to VSS
Input threshold voltage hysteresis*1 Vinth(hys)
0.5
Logic 1 input leakage current
IIN+
VIN = +3.3V
-
Logic 0 input leakage current
IIN-
VIN = 0V
-
FAULT terminal input electric current IoSD
FAULT : ON/VFAULT = 0.1V
-
FAULT clear time
FLTCLR
Fault output latch time.
18
VCC and VS undervoltage positive
going threshold.
VCC and VS undervoltage negative
going threshold.
VCC and VS undervoltage hysteresis
Over current protection level
VCCUV+
VSUV+
VCCUV-
VSUV-
VCCUVH
VSUVH-
ISD
PW = 100μs, RSD = 0
10.5
10.3
0.14
Fig.5
18.1
Output level for current monitor
ISO
Io = 10A
0.31
Thermistor for substrate temperature Rt
Thermistor Resistance
at 25C (Vth)
90
Reference voltage is “VSS” terminal voltage unless otherwise specified.
*1: The lower side’s VCE(SAT) and VF include a loss by the shunt resistance
Ratings
typ
-
-
1.8
2.1
1.3
1.6
1.8
2.1
1.3
1.6
-
-
0.08
1.6
-
-
0.8
100
-
2
-
11.1
10.9
0.2
-
0.33
100
Unit
max
0.1
mA
0.1
mA
2.4
2.7
-
V
-
2.3
2.6
-
V
-
4
C/W
5
0.4
mA
4
-
V
0.8
V
-
V
143
A
2
A
-
mA
80
ms
11.7
V
11.5
V
-
A
22.9
A
0.35
V
110
k
No.A2210-2/15

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