9 Drain-source on-state resistance
R DS(on)=f(T j); I D=30 A; V GS=10 V
20
BSC120N03LS G
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS; I D=250 µA
2.5
16
2
98 %
12
1.5
typ
8
1
4
0.5
0
-60 -20 20 60 100 140 180
Tj [°C]
0
-60 -20 20
60 100 140 180
Tj [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
1000
103
Ciss
Coss
102
Crss
101
100
25 °C 150 °C, 98%
150 °C
10
25 °C, 98%
100
0
Rev. 2.1
10
20
VDS [V]
1
30
0.0
page 6
0.5
1.0
1.5
2.0
VSD [V]
2013-05-21