SI5442DU-T1-GE3 データシートの表示（PDF） - Vishay Semiconductors
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SI5442DU-T1-GE3 Datasheet PDF : 9 Pages
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Si5442DU
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
0.025
10
TJ = 150 °C
TJ = 25 °C
1
0.020
0.015
0.010
0.005
ID = 8 A
TJ = 125 °C
TJ = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.000
0.0
1.0
2.0
3.0
4.0
5.0
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
0.8
0.7
0.6
0.5
0.4
ID = 250 μA
0.3
0.2
0.1
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
50
40
30
20
10
0
0.001 0.01
0.1
1
10
Time (s)
100 1000
Single Pulse Power, Junction-to-Ambient
100 Limited by RDS(on)*
100 μs
10
1 ms
1
0.1
TA = 25 °C
10 ms
100 ms
1s
10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
For technical questions, contact: pmostechsupport@vishay.com
Document Number: 63233
S13-2149-Rev. B, 14-Oct-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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