BUK116-50S データシートの表示（PDF） - Philips Electronics
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BUK116-50S Datasheet PDF : 13 Pages
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Philips Semiconductors
Logic level TOPFET
SMD version of BUK106-50L/S
Product specification
BUK116-50L/S
120 PD%
Normalised Power Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.4. Normalised limiting power dissipation.
PD% = 100⋅PD/PD(25 ˚C) = f(Tmb)
ID%
120
Normalised Current Derating
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Tmb / C
Fig.5. Normalised continuous drain current.
ID% = 100⋅ID/ID(25 ˚C) = f(Tmb); conditions: VIS = 5 V
ID & IDM / A
1000
BUK116-50L/S
Overload protection characteristics not shown
100
RDS(ON) = VDS/ID
tp =
10 us
100 us
10
DC
1 ms
10 ms
100 ms
1
1
10
100
VDS / V
Fig.6. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Zth / (K/W)
10
BUK116-50L/S
1 D=
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0
PD
tp
D
=
tp
T
0.001
1E-07
1E-05
1E-03
t/s
T
t
1E-01
Fig.7. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
1E+01
ID / A
200
150
100
BUK116-50L/S
VIS / V =
11
10
9
8
7
6
5
50
4
3
2
0
0
4
8
12
16
20
24
28
32
VDS / V
Fig.8. Typical output characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VIS; tp = 250 µs & tp < td sc
ID / A
50
40
VIS / V = 10
BUK116-50L/S
7
5
4
30
3
20
10
0
0
1
2
VDS / V
Fig.9. Typical on-state characteristics, Tj = 25 ˚C.
ID = f(VDS); parameter VIS; tp = 250 µs
July 1996
7
Rev 1.000
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