BYV29F-400 データシートの表示（PDF） - NXP Semiconductors.
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BYV29F-400 Datasheet PDF : 9 Pages
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NXP Semiconductors
Rectifier diodes
ultrafast
Product specification
BYV29F, BYV29X series
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
Peak isolation voltage from SOD100 package; R.H. ≤ 65%; clean and
all terminals to external
dustfree
heatsink
Visol
R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz;
all terminals to external
sinusoidal waveform; R.H. ≤ 65%; clean
heatsink
and dustfree
Cisol
Capacitance from pin 2 to f = 1 MHz
external heatsink
MIN. TYP. MAX. UNIT
-
- 1500 V
-
- 2500 V
- 10 - pF
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-hs
Rth j-a
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air.
MIN.
-
-
-
TYP.
-
-
55
MAX.
5.5
7.2
-
UNIT
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
VF
Forward voltage
IR
Reverse current
Qs
Reverse recovery charge
trr
Reverse recovery time
Irrm
Peak reverse recovery current
Vfr
Forward recovery voltage
CONDITIONS
IF = 8 A; Tj = 150˚C
IF = 8 A
IF = 20 A
VR = VRRM
VdddIIIIFFFFIIIRFFF====///=ddd2111tttV00===AARAAR251ttMoo;000t;do0VVTAAIFVRRAj///µµ=dR≥≥/µsst≥1;33s=03T00010j VV0=˚V;;CA1; 0/µ0s˚C
MIN.
-
-
-
-
-
-
TYP.
0.90
1.05
1.20
2.0
0.1
40
MAX.
1.03
1.25
1.40
50
0.35
60
UNIT
V
V
V
µA
mA
nC
-
50 60 ns
-
4.0 5.5 A
-
2.5
-
V
February 1999
2
Rev 1.400
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