VS-GA200HS60S1PBF データシートの表示（PDF） - Vishay Semiconductors
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VS-GA200HS60S1PBF Datasheet PDF : 7 Pages
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VS-GA200HS60S1PbF
Vishay Semiconductors
160
140
120
100
80
60
40
20
0
0
100
200
300
400
500
Maximum DC Collector Current (A)
Fig. 3 - Case Temperature vs. Maximum Collector Current
16
14
12
10
8
Typical value
6
4
2
0
0
300 600 900 1200 1500 1800
QG - Total Gate Charge (nC)
Fig. 5 - Typical Gate Charge vs. Gate to Emitter Voltage
1.6
400 A
1.4
1.2
200 A
1.0
120 A
0.8
20 40 60 80 100 120 140 160
TJ - Junction Temperature (°C)
Fig. 4 - Typical Collector to Emitter Voltage vs.
Junction Temperature
50
45
Eoff typical
40 TJ = 25 °C
VCE = 480 V
35 VGE = 15 V
IC = 200 A
30
Eon typical
25 Freewheeling
diode 30EPH06
20
0
10
20
30
40
50
RG - Gate Resistance (Ω)
Fig. 6 - Typical Switching Losses vs. Gate Resistance
80
70
TJ = 125 °C
VCE = 480 V
60
VGE = 15 V
VGE = 10 Ω
50
Freewheeling
40 diode 30EPH06
Eoff typical
30
20
Eon typical
10
0
50
75 100 125 150 175 200
IC - Collector to Emitter Current (A)
Fig. 7 - Typical Switching Losses vs.
Collector to Emitter Current
Revision: 10-Jun-15
3
Document Number: 94362
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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