LC05111CMT データシートの表示（PDF） - ON Semiconductor
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LC05111CMT Datasheet PDF : 17 Pages
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LC05111CMT
Table 3. ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
RESISTANCE
Internal resistance
(VCC−CS)
Rcsu VCC=Vuv_set
CS=0V
25°C
300
kW
Internal resistance
(VSS−CS)
Rcsd
VCC=3.7V
CS=0.1V
25°C
15
kW
DETECTION AND RELEASE DELAY TIME
Over−charge detection de-
Tov
lay time
25°C
0.8
1
1.2
sec
−30 to 70°C
0.6
1
1.5
Over−charge release delay
Tovr
time
25°C
12.8
16
19.2
ms
−30 to 70°C
9.6
16
24
Over−discharge detection
Tuv
delay time
25°C
16
20
24
ms
−30 to 70°C
12
20
30
Over−discharge release de- Tuvr
lay time
25°C
0.9
1.1
1.3
ms
−30 to 70°C
0.6
1.1
1.5
Discharge over−current
Toc1
VCC=3.7V
25°C
9.6
12
14.4
ms
detection delay time 1
−30 to 70°C
7.2
12
18
Discharge over−current
Tocr1
VCC=3.7V
25°C
3.2
4
4.8
ms
release delay time 1
−30 to 70°C
2.4
4
6
Discharge over−current
Toc2
VCC=3.7V
25°C
280
400
560
ms
detection delay time 2
(Short circuit)
−30 to 70°C
180
400
800
Charge Over−current
Toch
VCC=3.7V
25°C
12.8
16
19.2
ms
detection delay time
−30 to 70°C
9.6
16
24
Charge Over−current
Tochr
VCC=3.7V
25°C
3.2
4
4.8
ms
release delay time
−30 to 70°C
2.4
4
6
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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