DXT13003DG-13 データシートの表示（PDF） - Diodes Incorporated.

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DXT13003DG-13

450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223

Diodes Incorporated. 

DXT13003DG

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Collector-Emitter Voltage (VBE = 0V)

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Pulse Collector Current

Continuous Base Current

Peak Pulse Base Current

Symbol

VCES

VCEO

VEBO

IC

ICM

IB

IBM

Value

700

450

9

1.3

3

0.75

1.5

Unit

V

V

V

A

A

A

A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Power Dissipation

Characteristic

Thermal Resistance, Junction to Ambient

Thermal Resistance Junction to Lead

Operating and Storage Temperature Range

(Note 5)

(Note 6)

(Note 7)

(Note 5)

(Note 6)

(Note 7)

(Note 8)

Symbol

PD

RθJA

RθJA

RθJA

RθJL

TJ, TSTG

Value

3

2

0.7

42

62.5

178

17

-55 to +150

Unit

W

°C/W

°C

ESD Ratings (Note 9)

Characteristic

Electrostatic Discharge - Human Body Model

Electrostatic Discharge - Machine Model

Symbol

ESD HBM

ESD MM

Value

8,000

400

Unit JEDEC Class

V

3B

V

C

Notes:

5. For a device mounted with the collector lead on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under

still air conditions whilst operating in a steady-state.

6. Same as note (5), except the device is mounted on 25mm x 25mm 2oz copper.

7. Same as note (5), except the device is mounted on minimum recommended pad layout.

8. Thermal resistance from junction to solder-point (at the end of the collector lead).

9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

DXT13003DG

Datasheet Number: DS37262 Rev. 1 - 2

2 of 6

www.diodes.com

May 2014

© Diodes Incorporated

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