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123N08N データシートの表示(PDF) - Infineon Technologies
部品番号
コンポーネント説明
メーカー
123N08N
OptiMOS™3 Power-Transistor
Infineon Technologies
123N08N Datasheet PDF : 9 Pages
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5
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8
9
Parameter
Symbol Conditions
BSZ123N08NS3 G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
C
iss
-
C
oss
V
GS
=0 V,
V
DS
=40 V,
f
=1 MHz
-
C
rss
-
t
d(on)
-
t
r
V
DD
=40 V,
V
GS
=10 V,
-
t
d(off)
I
D
=20 A,
R
G
=1.6
Ω
-
t
f
-
Q
gs
-
Q
g(th)
-
Q
gd
V
DD
=40 V,
I
D
=20 A,
-
Q
sw
V
GS
=0 to 10 V
-
Q
g
-
V
plateau
-
Q
oss
V
DD
=40 V,
V
GS
=0 V
-
Reverse Diode
Diode continuous forward current
I
S
-
T
C
=25 °C
Diode pulse current
I
S,pulse
-
Diode forward voltage
V
SD
V
GS
=0 V,
I
F
=20 A,
T
j
=25 °C
-
Reverse recovery time
Reverse recovery charge
t
rr
-
V
R
=40 V,
I
F
=20A,
Q
rr
d
i
F
/d
t
=100 A/µs
-
5)
See figure 16 for gate charge parameter definition
1300
350
15
12
18
19
4
1700 pF
470
-
- ns
-
-
-
6.3
- nC
3.6
-
3.8
-
6.5
-
19
25
4.9
-V
25
34
-
40 A
-
160
1.0
1.2 V
45
- ns
54
- nC
Rev. 2.4
page 3
2009-11-12
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