MX29F800CB データシートの表示（PDF） - Integrated Device Technology

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MX29F800CB

8M-BIT [1024K x 8 / 512K x 16] SINGLE VOLTAGE 5V ONLY FLASH MEMORY

Integrated Device Technology 

MX29F800C T/B

VERIFY SECTOR PROTECT STATUS OPERATION

MX29F800C T/B provides hardware sector protection against Program and Erase operation for protected sec-

tors. The sector protect status can be read through Sector Protect Verify command. This method requires Vhv on

A9 pin, Vih on WE# and A1 pins, Vil on CE#, OE#, A6 and A0 pins, and sector address on A12 to A17 pins. If the

read out data is 01H, the designated sector is protected. Oppositely, if the read out data is 00H, the designated

sector is still not being protected.

DATA PROTECTION

To avoid accidental erasure or programming of the device, the device is automatically reset to read array mode

during power up. Besides, only after successful completion of the specified command sets will the device begin

its erase or program operation.

Other features to protect the data from accidental alternation are described as followed.

WRITE PULSE "GLITCH" PROTECTION

CE#, WE#, OE# pulses shorter than 5ns are treated as glitches and will not be regarded as an effective write

cycle.

LOGICAL INHIBIT

A valid write cycle requires both CE# and WE# at Vil with OE# at Vih. Write cycle is ignored when either CE# at

Vih, WE# a Vih, or OE# at Vil.

POWER-UP SEQUENCE

Upon power up, MX29F800C T/B is placed in read array mode. Furthermore, program or erase operation will be-

gin only after successful completion of specified command sequences.

POWER-UP WRITE INHIBIT

When WE#, CE# is held at Vil and OE# is held at Vih during power up, the device ignores the first command on

the rising edge of WE#.

POWER SUPPLY DECOUPLING

A 0.1uF capacitor should be connected between the Vcc and GND to reduce the noise effect.

P/N:PM1493

REV. 1.2, JUL. 05, 2012

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