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NLAS44599MNR2G データシートの表示(PDF) - ON Semiconductor

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NLAS44599MNR2G Datasheet PDF : 13 Pages
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NLAS44599
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
Positive DC Supply Voltage
VIS
Analog Input Voltage (VNO or VCOM)
VIN
Digital Select Input Voltage
IIK
DC Current, Into or Out of Any Pin
PD
Power Dissipation in Still Air
*0.5 to )7.0
V
*0.5 v VIS v VCC )0.5
*0.5 v VI v)7.0
V
$50
mA
QFN16
800
mW
TSSOP16
450
TSTG
TL
TJ
MSL
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Moisture Sensitivity
*65 to )150
°C
260
°C
+150
°C
Level 1
FR
VESD
Flammability Rating
ESD Withstand Voltage
Oxygen Index: 30% 35%
UL 94V0 (0.125 in)
Human Body Model (Note 1)
2000
V
Machine Model (Note 2)
200
Charged Device Model (Note 3)
1000
ILatchUp
qJA
LatchUp Performance
Thermal Resistance
Above VCC and Below GND at 125°C (Note 4)
QFN16
TSSOP16
$300
80
164
mA
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD22A114A.
2. Tested to EIA/JESD22A115A.
3. Tested to JESD22C101A.
4. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
VCC
DC Supply Voltage
VIN
Digital Select Input Voltage
VIS
Analog Input Voltage (NC, NO, COM)
TA
Operating Temperature Range
tr, tf
Input Rise or Fall Time, SELECT
VCC = 3.3 V $ 0.3 V
VCC = 5.0 V $ 0.5 V
Min
2.0
GND
GND
*55
0
0
Max
5.5
5.5
VCC
)125
100
20
Unit
V
V
V
°C
ns/V
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature 5C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
1
1
10
100
1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
http://onsemi.com
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