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IXGR50N90B2D1 データシートの表示(PDF) - IXYS CORPORATION

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IXGR50N90B2D1
IXYS
IXYS CORPORATION IXYS
IXGR50N90B2D1 Datasheet PDF : 6 Pages
1 2 3 4 5 6
IXGR 50N90B2D1
HiPerFASTTM
IGBT with Fast
Diode
IXGR 50N90B2D1
B2-Class High Speed IGBT
with Fast Diode
(Electrically Isolated Back Surface)
VCES
IC25
VCE(sat)
tfi typ
= 900 V
= 40 A
= 2.9 V
= 200 ns
Symbol
Test Conditions
VCES
V
CGR
VGES
VGEM
IC25
IC110
I
F110
I
CM
SSOA
(RBSOA)
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 110°C (IGBT)
TC = 110°C (diode)
TC = 25°C, 1 ms
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load @ 720V
PC
TC = 25°C
TJ
T
JM
T
stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
VISOL
FC
Weight
50/60 Hz, RMS, t = 1ms
Mounting force (PLUS247)
Maximum Ratings
900
V
900
V
± 20
V
± 30
V
40
A
19
A
22
A
200
A
ICM = 100
A
100
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
2500
V
20..120 / 4.5..25 N/lb
ISOPLUS247 5
g
ISOPLUS247 (IXGR)
E153432
G
C
E
ISOLATED TAB
G = Gate
E = Emitter
C = Collector
TAB = Collector
Features
Electrically isolated tab
International standard package outline
High current handling capability
MOS Gate turn-on
Drive simplicity
Rugged NPT structure
UL recognized
Molding epoxies meet UL 94 V-0
flammability classification
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
V
GE(th)
IC = 250 μA, VCE = VGE
I
CES
IGES
V
CE(sat)
VCE = VCES
VGE = 0 V
TJ = 150°C
VCE = 0 V, VGE = ± 20 V
IC = ITT,JV=GE1=251°5CV, Note 1, 2
Characteristic Values
Min. Typ. Max.
3.0
5.0 V
50 μA
1 mA
± 100 nA
2.2 2.9 V
Applications
Capacitor discharge & pulser circuits
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
© 2006 IXYS All rights reserved
DS99528(03/06)

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