Q67060-S6307-A7 データシートの表示（PDF） - Infineon Technologies
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Q67060-S6307-A7 Datasheet PDF : 15 Pages
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BTS 640 S2
Overvoltage protection of logic part
GND disconnect
+ 5V
R ST
RV
RI
IN
ST
IS
V Z2
Logic
+ Vbb
R IS
V Z1
R GND
GND
Signal GND
VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI= 4 kΩ typ,
RGND= 150 Ω, RST= 15 kΩ, RIS= 1 kΩ, RV= 15 kΩ,
Vbb
3 IN
1 ST
5 IS
VIN
V
ST
V
IS
Ibb
4
Vbb
OUT 6
PROFET
OUT 7
GND
2
VGND
Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) .
Due to VGND >0, no VST = low signal available.
GND disconnect with GND pull up
Reverse battery protection
+ 5V
RST
RI
IN
ST
IS
RV
RIS
Logic
VZ1
GND
-Vbb
Power
Inverse
Diode
OUT
3 IN
1 ST
5 IS
4
Vbb
PROFET
GND
2
6
OUT
7
OUT
VIN VSTVIS
Vbb
VGND
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
RGND
RL
Signal GND
Power GND
The load RL is inverse on, temperature protection is
not active
RGND= 150 Ω, RI= 4 kΩ typ, RST≥ 500 Ω, RIS≥ 200 Ω,
RV≥ 500 Ω,
Open-load detection
OFF-state diagnostic condition: VOUT > 3 V typ.; IN low
Vbb disconnect with energized inductive
load
4
high 3 IN
Vbb
OUT 6
1
ST
5 IS
PROFET
GND
OUT 7
2
OFF
ST
Logic
V bb
REXT
Out VOUT
RO
Vbb
Normal load current can be handled by the PROFET
itself.
Signal GND
Semiconductor Group
Page 9
2003-Oct-01
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