MBC13917EP データシートの表示（PDF） - Freescale Semiconductor

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MBC13917EP

General Purpose SiGe:C RF Cascode Low Noise Amplifier

Freescale Semiconductor 

Electrical Characteristics

Table 4. Electrical Characteristics Measured in Frequency-Specific Tuned Circuits (continued)

(Vcc = 2.7V, TA = 25°C unless otherwise noted)

Characteristic

Noise Figure

Output 3rd Order Intercept Point

Power Output at 1 dB Gain Compression

Input Return Loss

Small Signal Gain

Reverse Isolation

Output Return Loss

Symbol

Min

Typ

Max

Unit

NF

—

2.1

2.5

dB

OIP3

8.0

9.5

—

dBm

P1dBoutput

-1

1

—

dBm

S11

—

-8

-7

dB

S21

26

27

—

dB

S12

—

-47

-46

dB

S22

—

-9

-7.5

dB

370 MHz (see Figure 16)

Supply Current

RF Gain

Noise Figure

Output 3rd Order Intercept Point

Power Output at 1 dB Gain Compression

Input Return Loss

Small Signal Gain

Reverse Isolation

Output Return Loss

Icc

—

4.7

5.6

mA

G

27.5

28.6

—

dB

NF

—

2.2

2.6

dB

OIP3

9.2

10.7

—

dBm

P1dBoutput

0.7

2.2

—

dBm

S11

—

-12

-10

dB

S21

27

28.5

—

dB

S12

—

-47

-46

dB

S22

—

-12

-10

dB

434 MHz (see Figure 17)

Supply Current

RF Gain

Noise Figure

Output 3rd Order Intercept Point

Power Output at 1 dB Gain Compression

Input Return Loss

Small Signal Gain

Reverse Isolation

Output Return Loss

Icc

—

G

26

NF

—

OIP3

9.5

P1dBoutput

1

S11

—

S21

26

S12

—

S22

—

4.7

5.6

mA

27

—

dB

2.3

2.65

dB

10.9

—

dBm

2.2

—

dBm

-15

-10

dB

27

—

dB

-46

-45

dB

-19

-16

dB

900 MHz (see Figure 18)

Supply Current

RF Gain

Noise Figure

Icc

—

4.7

5.6

mA

G

22.5

24

—

dB

NF

—

1.19

1.5

dB

MBC13917 Advance Information, Rev. 1.0

Freescale Semiconductor

5

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