MBC13917EP データシートの表示（PDF） - Freescale Semiconductor

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MBC13917EP

General Purpose SiGe:C RF Cascode Low Noise Amplifier

Freescale Semiconductor 

Scattering and Noise Parameters

Table 4. Electrical Characteristics Measured in Frequency-Specific Tuned Circuits (continued)

(Vcc = 2.7V, TA = 25°C unless otherwise noted)

Characteristic

Output 3rd Order Intercept Point

Power Output at 1 dB Gain Compression

Input Return Loss

Small Signal Gain

Reverse Isolation

Output Return Loss

Symbol

Min

OIP3

11

P1dBoutput

2

S11

—

S21

23

S12

—

S22

—

Typ

12.4

3.5

-10

24

-40

-23

Max

—

—

-9

—

-39

-16

Unit

dBm

dBm

dB

dB

dB

dB

1900 MHz (see Figure 19)

Supply Current

RF Gain

Noise Figure

Output 3rd Order Intercept Point

Power Output at 1 dB Gain Compression

Input Return Loss

Small Signal Gain

Reverse Isolation

Output Return Loss

Icc

G

NF

OIP3

P1dBoutput

S11

S21

S12

S22

—

13.5

—

7

-2.5

—

13.8

—

—

4.7

14.9

1.8

8.5

-1.1

-13

14.8

-42.5

-11.8

5.6

—

2.15

—

—

-10

—

-41.5

-10

mA

dB

dB

dBm

dBm

dB

dB

dB

dB

3 Scattering and Noise Parameters

Table 5 through Table 8 lists the S parameters for the packaged part in a 50 Ω system at four supply voltage

levels.

Table 5. Scattering Parameters

(Vcc = 2.7V, 25°C, 50Ω system)

f (MHz)

S11

Mag

Ang

S21

Mag

Ang

S12

Mag

Ang

S22

Mag

Ang

100

0.864

-8.1 12.178

169.9

0.001

24.4

0.953

-1.1

150

0.859

-12.4 12.428

165.1

0.001

36.2

0.952

-1.5

200

0.843

-16.2 12.112

160.5

0.001

39.4

0.951

-2.2

250

0.831

-20.6 12.128

156.1

0.002

52.1

0.952

-2.8

300

0.812

-24.5

11.95

151.8

0.002

52.6

0.951

-3.3

350

0.794

-28.3 11.741

147.9

0.002

59.2

0.95

-4

400

0.775

-32.1 11.556

143.8

0.002

64.2

0.947

-4.6

450

0.754

-35.7 11.353

140

0.003

66

0.947

-5.4

MBC13917 Advance Information, Rev. 1.0

6

Freescale Semiconductor

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