ADP3212 データシートの表示（PDF） - ON Semiconductor
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ADP3212 Datasheet PDF : 35 Pages
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ADP3212, NCP3218, NCP3218G
ELECTRICAL CHARACTERISTICS
VCC = PVCC = 5.0 V, FBRTN = PGND = GND = 0 V, H = 5.0 V, L = 0 V, EN = VARFREQ = H, DPRSLP = L, PSI = 1.05 V,
VVID = VDAC = 1.2000 V, TA = −40°C to 100°C, unless otherwise noted. (Note 1) Current entering a pin (sink current) has a positive sign.
Parameter
Symbol
Conditions
Min
Typ
Max Units
SUPPLY
VCC Hysteresis (Note 2)
150
mV
HIGH−SIDE MOSFET DRIVER
Pullup Resistance, Sourcing
Current (Note 3)
BST = PVCC
1.8
3.3
W
Pulldown Resistance, Sinking
Current (Note 3)
BST = PVCC
1.0
2.0
W
Transition Times
Dead Delay Times
BST Quiescent Current
trDRVH
tfDRVH
tpdhDRVH
BST = PVCC, CL = 3 nF, Figure 2
BST = PVCC, CL = 3 nF, Figure 2
BST = PVCC, Figure 2
EN = L (Shutdown)
EN = H, no switching
15
30
ns
13
25
15
30
40
ns
1.0
10
mA
200
LOW−SIDE MOSFET DRIVER
Pullup Resistance, Sourcing
Current (Note 3)
1.7
2.8
W
Pulldown Resistance, Sinking
Current (Note 3)
0.8
1.7
W
Transition Times
Propagation Delay Times
SW Transition Timeout
SW Off Threshold
PVCC Quiescent Current
trDRVL
tfDRVL
tpdhDRVL
tTOSW
VOFFSW
CL = 3 nF, Figure 2
CL = 3 nF, Figure 2
CL = 3 nF, Figure 2
DRVH = L, SW = 2.5 V
EN = L (Shutdown)
EN = H, no switching
15
35
ns
14
35
11
30
ns
100
250
350
ns
2.5
V
1.0
10
mA
170
BOOTSTRAP RECTIFIER SWITCH
On Resistance (Note 3)
EN = L or EN = H and DRVL = H
4.0
6.0
8.0
W
1. All limits at temperature extremes are guaranteed via correlation using standard statistical quality control (SQC).
2. Guaranteed by design or bench characterization, not production tested.
3. Based on bench characterization data.
4. Timing is referenced to the 90% and 10% points, unless otherwise noted.
DRVL
tfDRVL
trDRVL
DRVH
(WITH RESPECT TO SW)
tpdhDRVH
trDRVH
VTH
tfDRVH
VTH
tpdhDRVL
SW
1.0 V
Figure 2. Timing Diagram (Note 4)
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