BAS21-G データシートの表示（PDF） - Vishay Semiconductors
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BAS21-G Datasheet PDF : 4 Pages
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BAS19-G, BAS20-G, BAS21-G
Vishay Semiconductors
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1)
RthJA
Junction temperature
Tj
Storage temperature range
Tstg
Operating temperature range
Top
Note
(1) Device on fiberglass substrate, see layout drawing below
VALUE
430
150
-65 to +150
-55 to +150
UNIT
K/W
°C
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL MIN.
Forward voltage
IF = 100 mA
VF
IF = 200 mA
VF
Leakage current
VR = 100 V
VR = 150 V
VR = 200 V
BAS19-G
IR
BAS20-G
IR
BAS21-G
IR
VR = VRmax., TJ = 150 °C
IR
Dynamic forward resistance
IF = 10 mA
rf
Diode capacitance
VR = 0, f = 1 MHz
CD
Reverse recovery time
IF = IR = 30 mA, RL = 100 ,
iR = 3 mA
trr
TYP.
5
MAX.
1.0
1.25
100
100
100
100
5
50
UNIT
V
V
nA
nA
nA
μA
pF
ns
LAYOUT FOR RthJA TEST
Thickness:
Fiberglass 1.5 mm (0.059 in.)
Copper leads 0.3 mm (0.012 in.)
12 (0.47)
15 (0.59)
0.8 (0.03)
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
2 (0.8)
1 (0.4)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
Rev. 1.3, 13-Feb-18
2
Document Number: 83390
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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