VSMB2020X01 データシートの表示（PDF） - Vishay Semiconductors

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VSMB2020X01

High Speed Infrared Emitting Diodes, 940 nm, GaAlAs, DH

Vishay Semiconductors 

www.vishay.com

VSMB2000X01, VSMB2020X01

Vishay Semiconductors

180

160

140

120

100

80 RthJA = 250 K/W

60

40

20

0

0 10 20 30 40 50 60 70 80 90 100

21343

Tamb - Ambient Temperature (°C)

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

120

100

80

60

RthJA = 250 K/W

40

20

0

0 10 20 30 40 50 60 70 80 90 100

21344

Tamb - Ambient Temperature (°C)

Fig. 2 - Forward Current Limit vs. Ambient Temperature

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL MIN.

Forward voltage

Temperature coefficient of VF

Reverse current

Junction capacitance

IF = 100 mA, tp = 20 ms

IF = 1 A, tp = 100 μs

IF = 1 mA

IF = 100 mA

VR = 5 V

VR = 0 V, f = 1 MHz, E = 0 mW/cm2

VF

VF

TKVF

TKVF

IR

CJ

1.15

Radiant intensity

Radiant power

Temperature coefficient of radiant

power

Angle of half intensity

IF = 100 mA, tp = 20 ms

IF = 1 A, tp = 100 μs

IF = 100 mA, tp = 20 ms

IF = 1 mA

IF = 100 mA

Ie

20

Ie

e

TKe

TKe



Peak wavelength

Spectral bandwidth

Temperature coefficient of p

IF = 30 mA

IF = 30 mA

IF = 30 mA

p

920



TKp

Rise time

Fall time

Cut-off frequency

IF = 100 mA, 20 % to 80 %

tr

IF = 100 mA, 20 % to 80 %

tf

IDC = 70 mA, IAC = 30 mA pp

fc

Virtual source diameter

d

TYP.

1.35

2.2

- 1.8

- 1.1

70

40

330

40

- 1.1

- 0.51

± 12

940

25

0.25

15

15

23

1.5

MAX.

1.6

10

60

960

UNIT

V

V

mV/K

mV/K

μA

pF

mW/sr

mW/sr

mW

%/K

%/K

deg

nm

nm

nm/K

ns

ns

MHz

mm

Rev. 1.5, 23-Aug-11

2

Document Number: 81930

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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