UTC2SA733 データシートの表示（PDF） - Unisonic Technologies

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UTC2SA733

LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies 

UTC 2SA733

NPNEPITAXIAL SILICON TRANSISTOR

LOW FREQUENCY AMPLIFIER

PNP EPITAXIAL SILICON

TRANSISTOR

DESCRIPTION

The UTC 2SA733 is an low frequency amplifier.

FEATURES

*Collector-Emitter voltage:

BVCBO=-50V

*Collector current up to –150mA

*High hFE linearity

*Complimentary to 2SC945

1

TO-92

1:EMITTER 2:COLLECTOR 3: BASE

ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )

PARAMETER

SYMBOL

VALUE

Collector-Base Voltage

VCBO

-60

Collector-Emitter Voltage

VCEO

-50

Emitter-Base Voltage

VEBO

-5

Collector Dissipation(Ta=25°C)

Pc

250

Collector Current

Ic

-150

Junction Temperature

Tj

125

Storage Temperature

TSTG

-55 ~ +150

UNIT

V

V

V

mW

mA

°C

°C

ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

Collector-Base Breakdown Voltage

BVCBO

Ic=-100µA, IE=0

-60

Collector-Emitter Breakdown Voltage BVCEO

IC=-10mA,IB=0

-50

Collector Cut-Off Current

ICBO

VCB=-40V,IE=0

Emitter Cut-Off Current

IEBO

VEB=-3V,Ic=0

DC Current Gain(note)

hFE1

VCE=-6V,Ic=-1mA

90

TYP

MAX

-100

-100

600

UNIT

V

V

nA

nA

Collector-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

Noise Figure

VCE(sat)

fT

Cob

NF

Ic=-100mA,IB=-10mA

VCE=-10V,Ic=-50mA

VCB=-10V,IE=0,f=1MHz

Ic=-0.1mA,VCE=-6V

RG=10kΩ,f=100Hz

-0.1 -0.3 V

100 190

MHz

2.0 3.0 pF

4.0 6.0 dB

UTC UNISONIC TECHNOLOGIES CO. LTD 1

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