UTC2SA1015 データシートの表示（PDF） - Unisonic Technologies
部品番号
コンポーネント説明
メーカー
UTC2SA1015 Datasheet PDF : 2 Pages
| |||
UTC2SA1015 PNP EPITAXIAL SILICON TRANSISTOR
CLASSIFICATION OF hFE1
RANK
Y
RANGE
120-240
TYPICAL CHARACTERISTIC CURVES
G
200-400
Fig.1 Static characteristics
-50
-40
IB=-300 µA
-30
IB=-250 µA
-20
IB=-200 µA
IB=-150 µA
-10
IB=-100 µA
IB=-50 µA
0
-0
-4
-8
-12
-16 -20
Collector-Emitter voltage ( V)
Fig.4 Saturation voltage
-101
Ic=10*IB
-100
VBE(sat)
Fig.2 DC current Gain
103
VCE=-6V
102
101
100
-10-1
-100
-101
-102
-103
Ic,Collector current (mA)
Fig.5 Current gain-bandwidth
product
103
VCE=-6V
102
Fig.3 Base-Emitter on Voltage
-102
VCE=-6V
-101
-100
-10-1
0
102
-10-1
101
-0.2
-0.4
-0.6
-0.8
-1.0
Base-Emitter voltage (V)
Fig.6 Collector output
Capacitance
f=1MHz
IE=0
-10-1
VCE(sat)
-10-2
-10-1
-100
-101
-102
-103
Ic,Collector current (mA)
101
100
-10-1
-100
-101
-102
Ic,Collector current (mA)
100
10-1
-100
-101
-102
-103
Collector-Base voltage (V)
UTC UNISONIC TECHNOLOGIES CO. LTD
2
QW-R201-004,A
Share Link: 