IHW30N160R2 データシートの表示（PDF） - Infineon Technologies
部品番号
コンポーネント説明
メーカー
IHW30N160R2 Datasheet PDF : 12 Pages
| |||
IHW30N160R2
Soft Switching Series
Ciss
15V
320V
1nF
1280V
10V
5V
0V
0nC 25nC 50nC 75nC 100nC 125nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=30 A)
100pF
Coss
Crss
0V
10V
20V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
D=0.5
0.2
10-1K/W
0.1
0.05
10-2K/W
0.02
0.01
R,(K/W)
0.2
0.1514
0.1284
R1
τ, (s)
1.51*10-1
1.14*10-2
8.98*10-4
R2
single pulse
C1=τ1/R1 C2=τ2/R2
10-3K/W
10µs 100µs 1ms 10ms 100ms 1s
tP, PULSE WIDTH
Figure 19. IGBT transient thermal
resistance
(D = tp / T)
D=0.5
0.2
10-1K/W
0.1
0.05
0.02
0.01
R,(K/W)
0.1385
0.1354
0.1176
0.087
R1
τ, (s)
5.49*10-2
7.70*10-3
6.83*10-4
1.94*10-5
R2
10-2K/W
1µs
single pulse
C1=τ1/R1 C2=τ2/R2
10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH
Figure 20. Diode transient thermal
impedance as a function of pulse width
(D=tP/T)
Power Semiconductors
8
Rev. 2.1 Nov 09
Share Link: 