1N5820 データシートの表示（PDF） - ON Semiconductor

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1N5820

SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS

ON Semiconductor 

1N5820, 1N5821, 1N5822

MAXIMUM RATINGS

Rating

Symbol 1N5820 1N5821 1N5822 Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Non-Repetitive Peak Reverse Voltage

RMS Reverse Voltage

Average Rectified Forward Current (Note 1)

VR(equiv) v 0.2 VR(dc), TL = 95°C

(RqJA = 28°C/W, P.C. Board Mounting, see Note 5)

Ambient Temperature

Rated VR(dc), PF(AV) = 0

RqJA = 28°C/W

Non-Repetitive Peak Surge Current

(Surge applied at rated load conditions, half wave, single phase

60 Hz, TL = 75°C)

Operating and Storage Junction Temperature Range

(Reverse Voltage applied)

VRRM

20

30

40

V

VRWM

VR

VRSM

24

36

48

V

VR(RMS)

14

21

28

V

IO

3.0

A

TA

90

85

80

°C

IFSM

80 (for one cycle)

A

TJ, Tstg

-65 to +125

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

*THERMAL CHARACTERISTICS (Note 5)

Characteristic

Thermal Resistance, Junction-to-Ambient

Symbol

RqJA

Max

28

Unit

°C/W

*ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 1)

Characteristic

Symbol 1N5820 1N5821 1N5822 Unit

Maximum Instantaneous Forward Voltage (Note 2)

(iF = 1.0 Amp)

(iF = 3.0 Amp)

(iF = 9.4 Amp)

VF

V

0.370 0.380 0.390

0.475 0.500 0.525

0.850 0.900 0.950

Maximum Instantaneous Reverse Current

@ Rated dc Voltage (Note 2)

TL = 25°C

TL = 100°C

1. Lead Temperature reference is cathode lead 1/32″ from case.

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

*Indicates JEDEC Registered Data for 1N5820-22.

iR

mA

2.0

2.0

2.0

20

20

20

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