TIP31C データシートの表示（PDF） - Diotec Semiconductor Germany

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TIP31C

General Purpose SiliconPower Transistors

Diotec Semiconductor Germany  

Characteristics (Tj = 25°C)

Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom

VCE = 30 V (B open)

TIP31

ICE0

TIP31A ICE0

VCE = 60 V (B open)

TIP31B ICE0

TIP31C ICE0

VCE = 40 V (B-E short)

VCE = 60 V (B-E short)

TIP31

ICES

TIP31A ICES

VCE = 80 V (B-E short)

VCE = 100 V (B-E short)

TIP31B ICES

TIP31C ICES

Emitter-Base cutoff current

VEB = 5 V, (C open)

IEB0

Gain-Bandwidth Product – Transitfrequenz

VCE = 10 V, IC = 0.5 A, f = 1 MHz

fT

Small signal current gain – Kleinsignal-Stromverstärkung

VCE = 10 V, IC = 0.5 A, f = 1 kHz

hfe

VCE = 10 V, IC = 0.5 A, f = 1 MHz

hfe

Switching times – Schaltzeiten (between 10% and 90% levels)

turn-on time

turn-off time

ICon = 1 A

ton

IBon = - IBoff = 100 mA

toff

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

Thermal resistance junction to case

Wärmewiderstand Sperrschicht – Gehäuse

RthC

Admissible torque for mounting

Zulässiges Anzugsdrehmoment

M4

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

TIP31 ... TIP31C

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

–

–

300 nA

–

–

300 nA

–

–

300 nA

–

–

300 nA

–

–

200 nA

–

–

200 nA

–

–

200 nA

–

–

200 nA

–

–

1 mA

3 MHz

–

–

20

–

–

3

–

–

–

300 ns

–

–

1 µs

–

< 63 K/W 1)

< 3 K/W

9 ± 10% lb.in.

1 ± 10% Nm

TIP32 ... TIP32C

1 Valid, if leads are kept at ambient temperature at a distance of 5 mm from case

Gültig wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden

2

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