TIP2955 データシートの表示（PDF） - Power Innovations

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TIP2955

PNP SILICON POWER TRANSISTOR

Power Innovations 

TIP2955

PNP SILICON POWER TRANSISTOR

JANUARY 1972 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN TYP MAX

Collector-emitter

V(BR)CEO breakdown voltage

IC = -30 mA

IB = 0

(see Note 5)

-60

Collector cut-off

ICEO current

VCE = -30 V

IB = 0

-0.7

Voltage between

ICEV base and emitter

VCE = -100 V

VBE = 1.5 V

-5

Emitter cut-off

IEBO current

VEB = -7 V

IC = 0

-5

Forward current

hFE

transfer ratio

VCE = -4 V

VCE = -4 V

IC = -4 A

IC = -10 A

20

(see Notes 5 and 6)

5

70

Collector-emitter

VCE(sat) saturation voltage

IB = -0.4 A

IB = -3.3 A

IC = -4 A

IC = -10 A

(see Notes 5 and 6)

-1.1

-3

Base-emitter

VBE

voltage

VCE = -4 V

IC = -4 A

(see Notes 5 and 6)

-1.8

Small signal forward

hfe

current transfer ratio VCE = -10 V

IC = -0.5 A

f = 1 kHz

20

|hfe|

Small signal forward

current transfer ratio

VCE = -10 V

IC = -0.5 A

f = 1 MHz

3

NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

UNIT

V

mA

mA

mA

V

V

thermal characteristics

RθJC

RθJA

PARAMETER

Junction to case thermal resistance

Junction to free air thermal resistance

MIN TYP MAX UNIT

1.39 °C/W

35.7 °C/W

resistive-load-switching characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS †

ton

Turn-on time

toff

Turn-off time

IC = -6 A

VBE(off) = 4 V

IB(on) = -0.6 A

RL = 5 Ω

IB(off) = 0.6 A

tp = 20 µs, dc ≤ 2%

† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

MIN TYP MAX UNIT

0.4

µs

0.7

µs

PRODUCT INFORMATION

2

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