BDX34B データシートの表示（PDF） - Inchange Semiconductor
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BDX34B Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
BDX34/A/B/C
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDX34
-45
BDX34A
-60
VCEO(SUS)
Collector-emitter
sustaining voltage
IC=-0.1A, IB=0
V
BDX34B
-80
BDX34C
-100
VCEsat
Collector-emitter
saturation voltage
BDX34/34A IC=-4A ,IB=-8mA
BDX34B/34C IC=-3A ,IB=-6mA
-2.5
V
BDX34/34A IC=-4A ; VCE=-3V
VBE
Base-emitter on voltage
BDX34B/34C IC=-3A ; VCE=-3V
-2.5
V
BDX34
VCB=-45V, IE=0
BDX34A
VCB=-60V, IE=0
ICBO
Collector cut-off current
BDX34B
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BDX34
BDX34A
ICEO
Collector cut-off current
BDX34B
BDX34C
VCB=-80V, IE=0
VCB=-100V, IE=0
VCE=-22V, IB=0
VCE=-30V, IB=0
VCE=-40V, IB=0
VCE=-50V, IB=0
-0.2 mA
-0.5 mA
IEBO
Emitter cut-off current
VEB=-5V; IC=0
-5.0 mA
hFE
DC current gain
BDX34/34A IC=-4A ; VCE=-3V
750
BDX34B/34C IC=-3A ; VCE=-3V
VF
Forward diode voltage
IF=-8A
-4.0
V
2
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